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SAMSUNG MZ-V9S2T0BW - 2TB SSD 990 EVO PLUS M.2

MZ-V9S2T0BW - 2TB SSD 990 EVO PLUS M.2 2TB

  • Brand: SAMSUNG
  • Category: Solid State Drives (SSD)
  • SKU: 6354843
  • MPN: MZ-V9S2T0BW
SAMSUNG

Samsung MZ-V9S2T0 2 TB M.2 PCI Express 4.0 NVMe V-NAND TLC

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Overview

Spectacular speed everyday
Blast through tasks faster. 990 EVO Plus with the latest NAND offers boosted sequential read/write speeds up to 7,250/6,300MB/s. Huge files, instant transfer.

Keep cool and power through your day
Optimised efficiency, extended performance. The nickel-coated controller increases MB/s per Watt by 73% compared to the 990 EVO, achieving the same power level and thermal control with less power consumption. Stay focused on work or play without worrying about overheating or battery life.

Extra space. Extra speed.
Harness the full power of your drive with enhanced Intelligent TurboWrite 2.0. Process massive data faster and breeze through heavy graphics with an enlarged TurboWrite region, now available in 4TB capacity.

Samsung Magician software
Make your SSD work like magic. Samsung Magician software's optimisation tools ensure the best SSD performance. It's a safe and easy way to migrate all your data for a Samsung SSD upgrade. Protect valuable data, monitor drive health, and get the latest firmware updates.

Bringing innovations to life
For decades, Samsungs NAND flash memory has powered groundbreaking technologies that have changed every part of our daily lives. This NAND flash technology also powers our consumer SSDs, making room for the next big push of innovation.

Performance
Up to 7,250MB/s of sequential read speed, 45% faster speed than the previous model, the 990 EVO.

Power efficiency
Power efficiency enhanced by 73% compared to the 990 EVO for more MB/s per watt, while maintaining performance and thermal control.

Versatility
Up to 4TB capacity and rapid Intelligent TurboWrite 2.0.

Key features

  • NVMe version: 2.0
  • Security algorithms: 256-bit AES
  • SSD capacity: 2 TB
  • SSD form factor: M.2
  • Interface: PCI Express 4.0
  • NVMe: Yes
  • Memory type: V-NAND TLC
  • Component for: PC
  • Hardware encryption: Yes
  • M.2 SSD size: 2280 (22 x 80 mm)
  • Read speed: 7250 MB/s
  • Write speed: 6300 MB/s
  • Random read (4KB): 1000000 IOPS
  • Random write (4KB): 1350000 IOPS
  • DevSlp (device sleep) support: Yes
  • S.M.A.R.T. support: Yes
  • TRIM support: Yes
  • Mean time between failures (MTBF): 1500000 h
  • Operating voltage: 3.3 V
  • Power consumption (read): 4.6 W
  • Power consumption (write): 4.2 W
  • Average power consumption (read): 4.6 W
  • Average power consumption (write): 4.2 W
  • Power consumption (idle): 0.06 W

Specifications

Power

Operating voltage3.3 V
Power consumption (read)4.6 W
Power consumption (write)4.2 W
Average power consumption (read)4.6 W
Average power consumption (write)4.2 W
Power consumption (idle)0.06 W
Power consumption DevSlp (device sleep)5 mW

Features

NVMe version2.0
Security algorithms256-bit AES
SSD capacity2 TB
SSD form factorM.2
InterfacePCI Express 4.0
NVMeYes
Memory typeV-NAND TLC
Component forPC
Hardware encryptionYes
M.2 SSD size2280 (22 x 80 mm)
Read speed7250 MB/s
Write speed6300 MB/s
Random read (4KB)1000000 IOPS
Random write (4KB)1350000 IOPS
DevSlp (device sleep) supportYes
S.M.A.R.T. supportYes
TRIM supportYes
Mean time between failures (MTBF)1500000 h

Packaging data

Package width139 mm
Package depth102 mm
Package height24 mm
Package weight70 g

Weight & dimensions

Width80.2 mm
Depth2.38 mm
Height80.2 mm
Weight9 g

Operational conditions

Operating temperature (T-T)0 - 70 °C
Operating shock1500 G

Questions

$926.89inc GST